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Surprisingly good thermoelectric performance of monolayer C3N
被引:7
|作者:
Jiao, W. Y.
[1
,2
]
Hu, R.
[1
,2
]
Han, S. H.
[1
,2
]
Luo, Y. F.
[1
,2
]
Yuan, H. M.
[1
,2
]
Li, M. K.
[1
,2
]
Liu, H. J.
[1
,2
]
机构:
[1] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
基金:
中国国家自然科学基金;
关键词:
thermoelectric properties;
C3N monolayer;
first-principles;
Boltzmann theory;
THERMAL-CONDUCTIVITY;
SINGLE-LAYER;
POWER-FACTOR;
1ST-PRINCIPLES;
SEMICONDUCTORS;
GRAPHENE;
NANOSHEETS;
TRANSPORT;
FIGURE;
D O I:
10.1088/1361-6528/ac302c
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The rapid emergence of graphene has attracted numerous efforts to explore other two-dimensional materials. Here, we combine first-principles calculations and Boltzmann theory to investigate the structural, electronic, and thermoelectric transport properties of monolayer C3N, which exhibits a honeycomb structure very similar to graphene. It is found that the system is both dynamically and thermally stable even at high temperature. Unlike graphene, the monolayer has an indirect band gap of 0.38 eV and much lower lattice thermal conductivity. Moreover, the system exhibits obviously larger electrical conductivity and Seebeck coefficients for the hole carriers. Consequently, the ZT value of p-type C3N can reach 1.4 at 1200 K when a constant relaxation time is predicted by the simple deformation potential theory. However, such a larger ZT is reduced to 0.6 if we fully consider the electron-phonon coupling. Even so, the thermoelectric performance of monolayer C3N is still significantly enhanced compared with that of graphene, and is surprisingly good for low-dimensional thermoelectric materials consisting of very light elements.
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页数:7
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