Universal arrhenius temperature activated charge transport in diodes from disordered organic semiconductors

被引：182
|
作者：
Craciun, N. I. [1 ]
Wildeman, J. [1 ]
Blom, P. W. M. [1 ]
机构：
[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
来源：
PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 05期
关键词：
D O I：
10.1103/PhysRevLett.100.056601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Charge transport models developed for disordered organic semiconductors predict a non-Arrhenius temperature dependence ln(mu) proportional to 1/T-2 for the mobility mu. We demonstrate that in space-charge limited diodes the hole mobility (mu(h)) of a large variety of organic semiconductors shows a universal Arrhenius temperature dependence mu(h)(T) = mu(0) exp(-Delta/kT) at low fields, due to the presence of extrinsic carriers from the Ohmic contact. The transport in a range of organic semiconductors, with a variation in room temperature mobility of more than 6 orders of magnitude, is characterized by a universal mobility mu(0) of 30-40 cm(2)/V s. As a result, we can predict the full temperature dependence of their charge transport properties with only the mobility at one temperature known.
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页数：4
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