Microwave power coupling in a surface wave excited plasma

被引:7
|
作者
Kar, Satyananda [1 ]
Alberts, Lukas [1 ]
Kousaka, Hiroyuki [1 ]
机构
[1] Nagoya Univ, Dept Mech Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源
AIP ADVANCES | 2015年 / 5卷 / 01期
关键词
100; MU-M/H; HIGH-DENSITY; METAL ROD; AXIAL UNIFORMITY; ANTENNA; FILM; DLC;
D O I
10.1063/1.4905713
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In recent decades, different types of plasma sources have been used for various types of plasma processing, such as, etching and thin film deposition. The critical parameter for effective plasma processing is high plasma density. One type of high density plasma source is Microwave sheath-Voltage combination Plasma (MVP). In the present investigation, a better design of MVP source is reported, in which over-dense plasma is generated for low input microwave powers. The results indicate that the length of plasma column increases significantly with increase in input microwave power. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
收藏
页数:6
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