Evidence of the de-multiplication interactions between threading dislocations in GaN films grown on (0001) sapphire substrates

被引：0

作者：

Wang, Cheng-Liang ^{[1
]}

Gong, Jyh-Rong ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Phys, Taichung 402, Taiwan

来源：

SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II | 2007年 / 994卷

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D O I：

暂无

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

We report the observation of threading dislocation de-multiplication process by transmission electron microscopy (TEM). The GaN films used in this study were grown on (0001) sapphire substrates with LT-GaN buffer layers by reduced pressure organometallic vapor phase epitaxy. By using g center dot b = 0 invisibility criterion, it was found that some of TDs were de-multiplicated by interactions among themselves. In particular, type a+c TDs were found to nucleate through the interactions between type a and type c TDs in GaN near the GaN/sapphire interface so that the de-multiplication of TDs in GaN films was achieved.

引用

页码：23 / +

页数：2

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