InAs quantum dots in GaAs holes: island number dependence on hole diameter and conduction-band coupling estimates

被引：12

作者：

Jeppesen, S ^{[1
]}

Miller, MS ^{[1
]}

Kowalski, B ^{[1
]}

Maximov, I ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 06期

关键词：

quantum dots; InAs islands; electron-beam lithography; GaAs substrate;

D O I：

10.1006/spmi.1996.0428

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We studied the formation of InAs islands in holes defined by electron-beam lithography on GaAs substrates. The islands grew selectively in the holes, with one to nine islands per hole. The number of islands depends simply on the hole diameter, filling the holes at a constant effective two-dimensional density. We define the ratio of this effective density to the density on an unpatterned control sample to be the selectivity ratio, and we find a selectivity ratio of greater than 1000 for the present samples. We estimated the lateral conduction-band coupling for closely spaced islands and conclude them to be plausible candidates for weakly coupled device building blocks. (C) 1998 Academic Press Limited.

引用

页码：1347 / 1352

页数：6

共 15 条

[1] InAs quantum dots in GaAs holes: Island number dependence on hole diameter and conduction-band coupling estimates
Lund Univ, Lund, Sweden
Superlattices Microstruct, 6 (1347-1352):
[2] Determination of the energy levels on InAs quantum dots with respect to the GaAs conduction band
Granados, D
García, JM
NANOTECHNOLOGY, 2005, 16 (05) : S282 - S284
[3] Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots
Lee, HS
Lee, JY
Kim, TW
Choo, DC
Kim, MD
Seo, SY
Shin, JH
JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 63 - 68
[4] Size and shape dependence of the lowest conduction band states in GaAs quantum dots
Zhao, GN
Xian-Yu, HQ
Song, J
Li, XB
Ren, SY
ACTA PHYSICA SINICA-OVERSEAS EDITION, 1999, 8 (11): : 845 - 852
[5] Stacking number dependence of size distribution of vertically stacked InAs GaAs quantum dots
Furukawa, Y
Noda, S
Ishii, M
Wakahara, A
Sasaki, A
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) : 452 - 456
[6] Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots
Y. Furukawa
S. Noda
M. Ishii
A. Wakahara
A. Sasaki
Journal of Electronic Materials, 1999, 28 : 452 - 456
[7] Energy dependence of the electron-hole in-plane anisotropy in InAs/GaAs quantum dots
Testelin, G.
Aubry, E.
Chaouache, M.
Maaref, M.
Bernardot, F.
Chamarro, M.
Gerard, J. -M.
Ferreira, R.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11): : 3900 - +
[8] NORMAL INCIDENCE INTERVALENCE SUBBAND ABSORPTION IN GASB QUANTUM-WELL ENHANCED BY COUPLING TO INAS CONDUCTION-BAND
KATZ, J
ZHANG, Y
WANG, WI
APPLIED PHYSICS LETTERS, 1993, 62 (06) : 609 - 611
[9] Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure
Marko, I. P.
Adams, A. R.
Sweeney, S. J.
Masse, N. F.
Krebs, R.
Reithmaier, J. P.
Forchel, A.
Mowbray, D. J.
Skolnick, M. S.
Liu, H. Y.
Groom, K. M.
Hatori, N.
Sugawara, M.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (01): : 82 - 86
[10] In-plane coupling effect in InAs/GaAs quantum dots arrays for intermediate band solar cell
Tomic, Stanko
Sogabe, Tomah
Okada, Yoshitaka
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 333 - 336

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