Hollow core dislocations in Mg-doped AlGaN

被引：0
|
作者：
Cherns, D [1 ]
Wang, YQ [1 ]
Liu, R [1 ]
Ponce, FA [1 ]
Amano, H [1 ]
Akasaki, I [1 ]
机构：
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
来源：
GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10(20) cm(-3)) Al0.03Ga0.97N films grown on (000 1) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.
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页码：609 / 614
页数：6
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