The current-voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals

In this work, we reported the effect of different metal contacts on performance of metal-oxide-semiconductor (MOS)-structured Schottky diodes formed with the vanadium pentoxide thin film (V2O5) interfacial layer. V2O5 thin films were deposited by radio frequency (RF) magnetron sputtering on n-type silicon (n-Si) and Corning glass (CG) substrates at room temperature. Then, the obtained films were annealed at 300 degrees C and 500 degrees C. The effects of annealing temperature on physical properties of the films were investigated by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, atomic force microscopy, UV-Vis spectroscopy, and photoluminescence. The MOS-structured Al/V2O5/n-Si, Ti/V2O5/n-Si and Au/V2O5/n-Si Schottky barrier diodes (SBDs) performance was analyzed with I-V measurements at room temperature. The Schottky diodes were compared with each other according to three methods (Classic, Norde and Cheung). The experimental results indicated that the Schottky diode produced with Al contact had better performance than the others.