Reduction of the 355-nm laser-induced damage initiators by removing the subsurface cracks in fused silica

被引:2
|
作者
Yang, Minghong [1 ]
Qi, Hongji [1 ]
Zhao, Yuanan [1 ]
Yi, Kui [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
关键词
subsurface damage; laser-induced damage resistance; fused silica; HF based wet etching; chemical leaching; magnetorheological finishing; POLISHING-INDUCED CONTAMINATION; OPTICS; DENSITY;
D O I
10.1117/12.903037
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The 355 nm laser-induced damage thresholds (LIDTs) of polished fused silica with and without the residual subsurface cracks were explored. HF based wet etching and magnetorheological finishing was used to remove the subsurface cracks. To isolate the effect of subsurface cracks, chemical leaching was used to eliminate the photoactive impurities in the polishing layer. Results show that the crack number density decreased from about 10(3) to <1 cm(-2), and the LIDT was improved as high as 2.8-fold with both the subsurface cracks and the polishing layer being removed. Subsurface cracks play a significant role in laser damage at fluencies between 15 similar to 31 J/cm(2) (355nm, 8ns). HF Etching of the cracks was shown to increase the damage performance as nearly high as that of the samples in which subsurface cracks are well controlled.
引用
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页数:7
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