Voltage Profile Improvement and Loss Reduction Using Optimal Allocation of SVC

被引:0
|
作者
Ghatak, Sriparna Roy [1 ]
Basu, Debarghya [2 ]
Acharjee, Parimal [2 ]
机构
[1] KIIT Univ, Dept Elect Engn, Bhubaneswar, Orissa, India
[2] NIT Durgapur, Dept Elect Engn, Durgapur, India
关键词
Static VAR Compensator; Recovery Time; Voltage Profile Improvement Index; Loss Reduction; Fast Voltage Stability Index;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
The power systems across the world are being operated at highly loaded conditions, as a result of which they are becoming more prone to voltage instability. In order to overcome this problem of voltage instability, it is necessary to determine the optimal location of voltage compensating devices like SVC. To reduce the computation time required for optimal allocation of SVC, it is useful to conduct its performance analysis only at the weak bus locations of the system. The weak bus locations of the system are identified with the help of Fast Voltage Stability Index. SVC helps to provide voltage profile improvement and loss reduction in a system. Improvement in voltage profile and voltage stability margin is indicated by Voltage Profile Improvement Index. Loss reduction provided by a SVC contributes to the power generation cost savings. The monthly generation cost savings obtained with the use of SVC can be used to pay back the investment cost of the device along with its corresponding interest amount. The total cost associated with a SVC is often paid back on EMI basis. The recovery time 'T' is the time required to pay back the cost associated with a compensating device with the help of the EMIs generated from the monthly generation cost savings. In this paper, optimal allocation of SVC has been done based on its performance assessment at the different weak bus locations using 4 major objective functions namely-recovery time, Voltage Profile Improvement Index and percentage of real and reactive power loss reduction.
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页数:6
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