Metrology and microscopic picture of the integer quantum Hall effect

被引:82
|
作者
Weis, J. [1 ]
von Klitzing, K. [1 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
关键词
quantum Hall effect; metrology; von Klitzing constant; contact resistance; electronic compressibility; scanning probe microscopy; 2-DIMENSIONAL ELECTRON-SYSTEM; HIGH MAGNETIC-FIELDS; SCANNING FORCE MICROSCOPE; EDGE CHANNELS; RESISTANCE; REGIME; DISSIPATION; TRANSISTOR; DISTRIBUTIONS;
D O I
10.1098/rsta.2011.0198
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Since 1990, the integer quantum Hall effect has provided the electrical resistance standard, and there has been a firm belief that the measured quantum Hall resistances are described only by fundamental physical constants-the elementary charge e and the Planck constant h. The metrological application seems not to rely on detailed knowledge of the microscopic picture of the quantum Hall effect; however, technical guidelines are recommended to confirm the quality of the sample to confirm the exactness of the measured resistance value. In this paper, we give our present understanding of the microscopic picture, derived from systematic scanning force microscopy investigations on GaAs/(AlGa) As quantum Hall samples, and relate these to the technical guidelines.
引用
收藏
页码:3954 / 3974
页数:21
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