New electroless copper plating bath using sodium hypophosphite as reductant

被引:10
|
作者
Yuan, X. L.
Gao, J.
Yang, Z. F.
Wang, Z. X.
Wang, Z. L. [1 ]
机构
[1] Shaanxi Normal Univ, Key Lab Appl Surface & Colloid Chem, Minist Educ, Xian 710062, Peoples R China
基金
中国国家自然科学基金;
关键词
Complexing agent; Nitrilotriacetic acid; Sodium hypophosphite; Electroless copper plating; REDUCING AGENT; DEPOSITION; FILM; ALLOYS; INTERFACE;
D O I
10.1179/1743294411Y.0000000049
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, a new environment friendly electroless plating bath using sodium hypophosphite as reductant and nitrilotriacetic acid as complexing agent was investigated under the acid condition. The effects of bath temperature, pH, CuSO4 center dot 5H(2)O concentration, nitrilotriacetic acid concentration and NaH2PO2 center dot H2O concentration upon the deposition rate and the bath stability were studied. The electrochemical results indicated that the deposition rate of the electroless copper increased with the decrease in the pH, and it reached 2.4 mu m h(-1) when the bath pH was 6.0. The as deposited Cu films were characterised by energy dispersive X-ray analyser, X-ray diffraction, atomic force microscopy and resistivity measurement. The quality of the Cu films were improved by the addition of a surfactant PEG-600, and a uniform copper film with a low resistivity (2.60 mu Omega cm) was obtained, which was able to be used as seed layer for electroplating Cu.
引用
收藏
页码:377 / 381
页数:5
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