Lithium-related states as deep electron traps in ZnO

被引:53
|
作者
Lopatiuk, O
Chernyak, L [1 ]
Osinsky, A
Xie, JQ
机构
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[2] SVT Associates, Eden Prairie, MN 55344 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2136348
中图分类号
O59 [应用物理学];
学科分类号
摘要
Carrier trapping in Li-doped ZnO was studied using Electron Beam Induced Current technique, as well as cathodoluminescence spectroscopy and persistent photoconductivity measurements. Under electron beam excitation, the minority carrier diffusion length underwent a significant increase, which was correlated with growing carrier lifetime, as demonstrated by the irradiation-induced decay of CL intensity of the near-band-edge transition. Variable-temperature cathodoluminescence and photoconductivity experiments showed evidence of carrier trapping and yielded activation energies of 280 and 245 meV, respectively. These observations are attributed to the presence of a deep, Li-related acceptor state. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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