Optical damage threshold of silicon for ultrafast infrared pulses - art. no. 67201M

被引：1
|
作者：
Cowan, Benjamin M. [1 ]
机构：
[1] Tech X Corp, Boulder, CO 80303 USA
来源：
LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2007 | 2008年 / 6720卷
关键词：
damage threshold; silicon; ultrafast; picosecond; infrared;
D O I：
10.1117/12.753720
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present measurements of the optical damage threshold of crystalline silicon in air for ultrafast pulses in the near infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm, extending to 2260 nm. We discuss the motivation for the measurements and give theoretical context. We then describe the experimental setup, diagnostics, and procedure. The results show a breakdown threshold of 0.2 J/cm(2) at 1550 nm and 1.06 ps FWHM pulse duration, and a weak dependence on wavelength.
引用
收藏
页码：M7201 / M7201
页数：11
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