STUDY OF A SOLAR CELL WITH A MULTILAYERED WINDOW BASED ON Si1-xGex USING AMPS-1D

The Silicon-Germanium (SiGe) technology, whose preliminary developments date from the mid-1980s and whose arrival on the market is recent, meets this joint need for economy and performance. In our days solar cells to thin films are increasingly used primarily because of their low cost. In recent decades the performance of these cells were significantly improved. In this work, we simulate solar cell base Si (1-x) Ge (X) multilayer window using software (AMPS-1D) to analyze some parameters. In particular, the properties of the window layer (thickness, doping, etc.) play a key role in the performance of the cell, and in order to optimize them, their influence on the photovoltaic quantities of the solar cell is studied. In order to highlight the importance of the deposition of a Si (1-x) Ge (X) type window layer on the Si (1-x) Ge (X) solar cells, a comparison between three cells , one with a window layer, the other with two layers windows and the third with three layers windows was made under 300 K and one sun (AM1.5) . The optimal solar cell was founding for the first window layer (100 nm ; x = 0.3 ) ,second window layer (80 nm ; x = 0.2) and the third window layer (60 nm ; x = 0.1 ) for 15.56 % optimal efficiency. This comparison led to the following conclusion: the multiplication of the cascade windows leads to a cell equivalent to a gradual window.