A Surface Potential Based Quasi-Ballistic Double Gate MOSFET Model

被引：0
|
作者：
Huang, Jin [1 ,2 ]
Zhang, Ganggang [2 ]
Liu, Xiaoyan [2 ]
Du, Gang [2 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Sch ECE, Shenzhen 518055, Peoples R China
[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年
关键词：
MOSFET model; Quasi-Ballistic Transport; Double-Gate Model;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A double gate MOSFET model is developed with surface potential based charge model and quasi-ballistic transport based velocity model with only one extracted parameter. Compared to the traditional drift-diffusion model, the quasi-ballistic transport velocity model can describe the I-V characteristics better for sub-30nm MOSFET. Besides, a completely surface potential based charge model with both dope and inversion charge is more accurate at smaller feature size. This model is verified by numerical simulations at the end of this paper.
引用
收藏
页码：467 / 470
页数：4
相关论文
共 50 条
  • [1] Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits
    Martinie, Sebastien
    Le Carval, Gilles
    Munteanu, Daniela
    Soliveres, S.
    Autran, Jean-Luc
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (09) : 2443 - 2453
  • [2] Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects
    Martinie, S.
    Munteanu, D.
    Le Carval, G.
    Jaud, M. -A.
    Autran, J. L.
    NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, : 837 - +
  • [3] Analytical modelling and performance analysis of double-gate MOSFET-based circuit including ballistic/quasi-ballistic effects
    Martinie, S.
    Munteanu, D.
    Le Carval, G.
    Autran, J. L.
    MOLECULAR SIMULATION, 2009, 35 (08) : 631 - 637
  • [4] Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs
    Mangla, Anurag
    Sallese, Jean-Michel
    Sampedro, Carlos
    Gamiz, Francisco
    Enz, Christian
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 2640 - 2646
  • [5] Analytical model for quasi-ballistic transport in MOSFET including carrier backscattering
    Sandeep Semwal
    Sonal Agrawal
    Anurag Srivastava
    Gaurav Kaushal
    Journal of Computational Electronics, 2021, 20 : 838 - 847
  • [6] Analytical model for quasi-ballistic transport in MOSFET including carrier backscattering
    Semwal, Sandeep
    Agrawal, Sonal
    Srivastava, Anurag
    Kaushal, Gaurav
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2021, 20 (02) : 838 - 847
  • [7] An optimized nanoscale Quasi-Ballistic DG MOSFET model with diffusive carrier scattering dependency
    Murnal, Vyas R.
    Vijaya, C.
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2023, 110 (06) : 1101 - 1120
  • [8] A new backscattering model giving a description of the quasi-ballistic transport in Nano-MOSFET
    Fuchs, E
    Dollfus, P
    Le Carval, G
    Barraud, S
    Villanueva, D
    Salvetti, F
    Jaouen, H
    Skotnicki, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) : 2280 - 2289
  • [9] Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell
    Martinie, S.
    Jaud, M. -A.
    Munteanu, D.
    Thomas, O.
    Le Carval, G.
    Autran, J. L.
    NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: BIOFUELS, RENEWABLE ENERGY, COATINGS FLUIDICS AND COMPACT MODELING, 2009, : 359 - +
  • [10] Extraction of Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Based on Monte Carlo Method
    Ishida, Ryoma
    Koba, Shunsuke
    Tsuchiya, Hideaki
    Kamakura, Yoshinari
    Mori, Nobuya
    Uno, Shigeyasu
    Ogawa, Matsuto
    2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2014, : 153 - 156
12345