Measurement of the damage profile of ion-implanted GaAs using an optical method

被引：0
|
作者：
Gal, M [1 ]
Wengler, MC [1 ]
Ilyas, S [1 ]
Roffi, I [1 ]
Tan, HH [1 ]
Jagadish, C [1 ]
机构：
[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
来源：
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/SIM.2000.939216
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe an easy-to-use, computer controlled, optical method, based on differential reflectance, capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si implanted GaAs. The resulting damage pro-riles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95).
引用
收藏
页码：145 / 148
页数：4
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