Multi-finger power SiGeHBTs for thermal stability enhancement over a wide biasing range

被引：5

作者：

Jin Dongyue ^{[1
]}

Zhang Wanrong ^{[1
]}

Shen Pei ^{[1
]}

Xie Hongyun ^{[1
]}

Wang Yang ^{[1
]}

Zhang Wei ^{[1
]}

He Lijian ^{[1
]}

Sha Yongping ^{[1
]}

Li Jia ^{[1
]}

Gan Junning ^{[1
]}

机构：

[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100022, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 06期

基金：

中国国家自然科学基金;

关键词：

SiGe; heterojunction bipolar transistor; power; thermal stability;

D O I：

10.1016/j.sse.2007.12.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multi-finger power SiGe heterojunction bipolar transistors (HBTs) with emitter ballasting resistor and non-uniform finger spacing are fabricated, and temperature profiles of them are measured. Experimental results show that both of them could improve the temperature profile compared with an HBT which has uniform finger spacing. For the HBT with emitter ballasting resistor, the ability to lower the peak temperature is weakened as power increases. However, for the HBT with non-uniform finger spacing, the ability to improve temperature profile is kept over a wide biasing range. Therefore, the experimental results directly prove that the technique of non-uniform finger spacing is a better method for enhancing the thermal stability of power HBTs over a wide biasing range. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：937 / 940

页数：4

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