Enhanced infrared transmission of GZO film by rapid thermal annealing for Si thin film solar cells

被引：8

作者：

Jia, Haijun ^{[1
]}

Matsui, Takuya ^{[1
]}

Kondo, Michio ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

PROGRESS IN PHOTOVOLTAICS | 2012年 / 20卷 / 01期

关键词：

Ga doped ZnO (GZO); rapid thermal annealing; microcrystalline silicon and microcrystalline silicon-germanium; thin film solar cells; ZINC-OXIDE FILMS; MICROCRYSTALLINE SILICON; MOBILITY;

D O I：

10.1002/pip.1108

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Ga doped ZnO (GZO) films prepared by sputtering at room temperature were rapid thermal annealed (RTA) at elevated temperatures. With increasing annealing temperature up to 570 degrees C, film transmission enhanced significantly over wide spectral range especially in infrared region. Hall effect measurements revealed that carrier density decreased from similar to 8?x?1020 to similar to 3?x?1020 cm-3 while carrier mobility increased from similar to 15 to similar to 28?cm2/Vs after the annealing, and consequently low film resistivity was preserved. Hydrogenated microcrystalline Si (mu c-Si:H) and microcrystalline Si1-xGex (mu c-Si1-xGex:H, x?=?0.1) thin film solar cells fabricated on textured RTA-treated GZO substrates demonstrated strong enhancement in short-circuit current density due to improved spectral response, exhibiting quite high conversion efficiencies of 9.5% and 8.2% for mu c-Si:H and mu c-Si0.9Ge0.1:H solar cells, respectively. Copyright circle plus 2011 John Wiley & Sons, Ltd.

引用

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页码：111 / 116

页数：6

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