Microstructured SiOx thin films deposited from hexamethyldisilazane and hexamethyldisiloxane using atmospheric pressure thermal microplasma jet

被引:14
|
作者
Saito, Tomohiro [1 ]
Mitsuya, Rei [1 ]
Ito, Yuta [1 ]
Higuchi, Takeshi [1 ]
Aita, Tadahiro [1 ]
机构
[1] Yamagata Univ, Dept Appl Chem Chem Engn & Biochem Engn, Jonan 4-3-16, Yonezawa, Yamagata, Japan
关键词
Atmospheric pressure microplasma; Silicon oxide; Thin film; Microstructure; CHEMICAL-VAPOR-DEPOSITION; PLASMA-JET; OXIDE COATINGS; INNER SURFACE; NANOPOWDERS;
D O I
10.1016/j.tsf.2018.11.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mictrostructured silicon oxide (SiOx) thin films were deposited on glass and metal substrates from 1,1,1,3,3,3-hexamethyldisilazane (HMDSN) and hexamethyldisiloxane (HMDSO) by using atmospheric-pressure thermal microplasma jet. Two kinds of string-like products, randomly bent string-like products and linear string-like products, were deposited and they formed microstructured films. The bent string-like products formed labyrinth-like structures and the linear string-like products lay in parallel to form a large aligned structure. The width of both the bent and linear string-like products was from 1 to 3 mu m, regardless of the kind of the precursor but depending on the plasma irradiation conditions. The influence of various surface microstructure of substrates on the formation of the SiOx microstructure was investigated to make clear the mechanism for the formation of the microstructures.
引用
收藏
页码:321 / 328
页数:8
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