Investigation of Non-Equilibrium Electron-Hole Plasma in Nanowires by THz Spectroscopy

被引：0
|
作者：
Cirlin, G. E. [1 ,3 ]
Buyskih, A. C. [1 ,3 ]
Bouravlev, A. D. [1 ,3 ]
Samsonenko, Yu. B. [1 ,3 ]
Kaliteevski, M. A. [1 ,2 ,3 ]
Gallant, A. J. [4 ]
Zeze, D. [4 ]
机构：
[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
[2] ITMO Univ, St Petersburg 197101, Russia
[3] St Petersburg Acad Univ, St Petersburg 194021, Russia
[4] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England
来源：
OPTICS AND SPECTROSCOPY | 2016年 / 120卷 / 05期
基金：
俄罗斯科学基金会;
关键词：
TERAHERTZ EMISSION; SEMICONDUCTOR; SURFACES;
D O I：
10.1134/S0030400X16050076
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Efficient emission of THz radiation by AlGaAs nanowires via excitation of photocurrent by femtosecond optical pulses in nanowires was observed. Dynamics of photoinduced charge carrier was studied via influence of electron-hole plasma on THz radiation by optical pump THz probe method. It was found that characteristic time of screening of contact field is about 15 ps. Recombination of non-equilibrium occurs in two stages: fast recombination of free electron and holes (with relaxation time about 700 ps), and slow recombination (with relaxation time about 15 ns), which involves a capture of electrons and holes on the defects of crystalline structure of nanowires.
引用
收藏
页码：751 / 755
页数：5
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