Preparation and characterization of free-standing porous silicon films with high porosity

被引：1
|
作者：
Xu, DS [1 ]
Guo, GL
Gui, LL
Zhang, BR
Qin, GG
机构：
[1] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
来源：
ACTA PHYSICO-CHIMICA SINICA | 1998年 / 14卷 / 07期
关键词：
porous silicon; free-standing films; high porosity; photoluminescence;
D O I：
10.3866/PKU.WHXB19980701
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have obtained free-standing porous silicon films with porosity above 90% by using anodic oxidizing, electropolishing, chemical etching and supercritical drying methods. These highly porous films exhibited near 100% transmission in the near infrared and strong photoluminescence (PL). The porosity of these films increased with prolonging the time of chemical etching. Meanwhile, thr blueshift of the optical transmission curves and the increasing of the PL intensity was observed. However, there is no clear size dependence of the peak energy of the FL.
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收藏
页码：577 / 580
页数：4
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