Nondestructive Control of the Surface, Layers, and Charge Carrier Concentration on SiC Substrates and Structures

被引：1
|
作者：
Markov, A. V. [1 ]
Panov, M. F. [1 ]
Rastegaev, V. P. [1 ]
Sevost'yanov, E. N. [1 ]
Trushlyakova, V. V. [1 ]
机构：
[1] St Petersburg State Electrotech Univ LETI, St Petersburg 197376, Russia
来源：
TECHNICAL PHYSICS | 2019年 / 64卷 / 12期
关键词：
D O I：
10.1134/S1063784219120181
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon carbide substrates and epitaxial structures are investigated by nondestructive contactless methods. Parameters of the disrupted surface layer and roughnesses are determined using ellipsometry and atomic force microscopy. The free charge carrier concentration is determined by IR spectroscopy. The thicknesses in the multilayer epitaxial structure on SiC are determined using IR spectroscopy and scanning electron microscopy.
引用
收藏
页码：1774 / 1779
页数：6
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