Engineering the work function of solution-processed electrodes of silver nanocrystal thin film through surface chemistry modification

被引:9
|
作者
Seong, Mingi [1 ]
Kim, Haneun [1 ]
Lee, Seung-Wook [2 ]
Kim, Donghun [3 ]
Oh, Soong Ju [1 ]
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South Korea
[2] Korea Univ, Dept Semicond Syst Engn, Seoul 02841, South Korea
[3] Korea Inst Sci & Technol, Computat Sci Res Ctr, 5,Hwarang Ro 14 Gil, Seoul 02792, South Korea
来源
APL MATERIALS | 2018年 / 6卷 / 12期
基金
新加坡国家研究基金会;
关键词
CHARGE INJECTION; CARBON NANOTUBE; NANOPARTICLES; TRANSPARENT;
D O I
10.1063/1.5066040
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A solution-processable electrode is a key component in flexible electronics. Despite recent studies on silver nanocrystal (Ag NC)-based electrodes with high conductivity, the absence of a strategy to control the work function has limited the development of low-cost and high-performance electronic devices. In this report, we introduce a chemical route to manipulate the work function of solution-processed Ag NC-based electrodes. The structural, chemical, optical, and electronic properties, as well as the work functions, of the Ag NC thin films treated with three types of halide ligands (Cl-, Br-, and I-) were investigated. Ultraviolet photoelectron spectroscopy analysis shows that the work functions are shifted to 4.76, 4.43, and 4.04 eV when the ligands are changed to Cl-, Br-, and I-, respectively. The trend in the shift induced by the halide ligands matches the results of atomistic density functional theory calculations and scales with the strength of the dipoles formed by the electron transfer at the NC/ligand interfaces. To demonstrate the impact of our strategy in device applications, we fabricated all-NC-based thin-film transistors and complementary metal-oxide-semiconductor inverters. This study provides a fundamental understanding of the surface states of nanomaterials and also offers technological benefits for the construction of low-cost, high-performance electronic devices. (C) 2018 Author(s).
引用
收藏
页数:7
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