High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

被引：30

作者：

Tukiainen, Antti ^{[1
]}

Aho, Arto ^{[1
]}

Gori, Gabriele ^{[2
]}

Polojarvi, Ville ^{[1
]}

Casale, Mariacristina ^{[2
]}

Greco, Erminio ^{[2
]}

Isoaho, Riku ^{[1
]}

Aho, Timo ^{[1
]}

Raappana, Marianna ^{[1
]}

Campesato, Roberta ^{[2
]}

Guina, Mircea ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, POB 692, FI-33101 Tampere, Finland

[2] CESI SpA, Via Rubattino 54, I-20134 Milan, Italy

来源：

PROGRESS IN PHOTOVOLTAICS | 2016年 / 24卷 / 07期

关键词：

multijunction solar cells; molecular beam epitaxy; metal-organic chemical vapor deposition; dilute nitride semiconductors; QUANTUM-WELLS; V SEMICONDUCTORS; GAINNAS; TEMPERATURE; (GAIN)(NAS); SPACE;

D O I：

10.1002/pip.2784

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of similar to 29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency tandem solar cells with three or more junctions. Copyright (c) 2016 John Wiley & Sons, Ltd.

引用

页码：914 / 919

页数：6

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