REDUCTION OF MINORITY CARRIER RECOMBINATION AT SILICON SURFACES AND CONTACTS USING ORGANIC HETEROJUNCTIONS

被引：0

作者：

Avasthi, Sushobhan ^{[1
]}

Vertelov, Grigory ^{[2
]}

Schwartz, Jeffrey ^{[2
]}

Sturm, James C. ^{[1
]}

机构：

[1] Princeton Univ, Princeton Inst Sci & Technol Mat, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Princeton Inst Sci & Technol Mat, Dept Chem, Princeton, NJ 08544 USA

来源：

2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年

关键词：

SOLAR-CELLS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We present an approach for silicon (100) surface passivation using the organic small molecule, 1-10 phenanthrenequinone. Lifetime measurements show that on passivated silicon surfaces, recombination velocities of less than 100 cm/s can be achieved. Such electrically inactive surfaces are used to demonstrate a wide-bandgap organic/silicon heterojunction which reduces the effective minority carrier surface recombination at the metal/silicon contact compared to a similar structure without the organic layer.

引用

页码：2046 / +

页数：2

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