Many-body effects on the optical spectra of InAs/GaAs quantum dots

被引:65
|
作者
Heitz, R
Guffarth, F
Mukhametzhanov, I
Grundmann, M
Madhukar, A
Bimberg, D
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ So Calif, Dept Phys, Photon Mat & Devices Lab, Los Angeles, CA 90089 USA
[3] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA
关键词
D O I
10.1103/PhysRevB.62.16881
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Many-body effects on the exciton spectra of self-organized InAs/GaAs quantum dots (QD's) are investigated in high-density photoluminescence experiments. Opposite renormalization of the ground- and excited-state transition energies is observed with increasing exciton occupation of the QD's. The ground-state transition energy decreases by similar to 16 meV whereas the excited-state transition energies increase up to similar to 26 meV for an average occupation with 18 excitons corresponding to a volume density of similar to2 X 10(19) cm(-3). The shrinkage of the ground-state transition energy normalized to the exciton binding energy is significantly smaller than band-gap renormalization in higher dimensional systems supporting the strong confinement in the self-organized InAs/GaAs QD's.
引用
收藏
页码:16881 / 16885
页数:5
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