Comprehensive analysis of charge pumping data for trap identification

被引：0
|
作者：
Veksler, D. [1 ,2 ]
Bersuker, G.
Koudymov, A. [2 ,3 ,4 ]
Young, C. D. [2 ]
Liehr, M. [2 ]
Taylor, B. [2 ]
机构：
[1] SEMATECH, Austin, TX 78741 USA
[2] SEMATECH, Albany, NY 12203 USA
[3] Rensselaer Polytech Inst, Troy, NY 12180 USA
[4] Sensitron Semicond, Deer Pk, NY 11729 USA
来源：
2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2011年
关键词：
charge pumping; trap kinetics; MOSFET characterization; configurational relaxation of traps;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analysis methodology for the charge pumping (CP) data, which considers non-elastic electron/hole capturing and releasing processes, is proposed. It is shown that the multi-phonon-assisted rearrangement of the dielectric lattice around the traps, associated with the charge trapping, is important for the interpretation of experimental results and needs to be taken into account. Analysis of the temperature dependent multi-frequency charge pumping data, measured on the MOSFETs with different thickness of the interfacial layer in the high-k dielectric gate stack, allowed to extract the trap energy and spatial profiles and helps to identify the nature of these traps.
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页数：5
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