Ballistic hole transport in a quantum wire

被引：17
|
作者：
Pfeiffer, LN
de Picciotto, R
West, KW
Baldwin, KW
Quay, CHL
机构：
[1] Bell Labs, Lucent Technol Inc, Murray Hill, NJ 07974 USA
[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期
关键词：
D O I：
10.1063/1.2012520
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report ballistic hole conduction in 2 mu m long GaAs quantum wires of nominal cross-section 15 nm by 15 nm. In each of eight test wires, we observe several quantized conduction steps of approximate height 0.77 e(2)/h. The wires were fabricated using the cleaved edge overgrowth molecular-beam epitaxy process, and the modulation-doped acceptors were incorporated using a carbon filament as the source of atomic carbon. (C) 2005 American Institute of Physics.
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