Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates

被引：11
|
作者：
Ahn, Yoonho [1 ]
Seo, Jeongdae [1 ]
Lim, Daeyoung [1 ]
Son, Jong Yeog [1 ]
机构：
[1] Kyung Hee Univ, Dept Appl Phys, Yongin 446701, South Korea
来源：
CURRENT APPLIED PHYSICS | 2015年 / 15卷 / 05期
关键词：
Ferroelectric thin film; BiFeO3; Glass substrate; Ferroelectric domain structure;
D O I：
10.1016/j.cap.2015.02.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated ferroelectric characteristics of BiFeO3 (BFO) thin films on SrRuO3 (SRO)/yttria-stabilized zirconia (YSZ)/glass substrates grown by pulsed laser deposition. YSZ buffer layers were employed to grow highly crystallized BFO thin films as well as SRO bottom electrodes on glass substrates. The BFO thin films exhibited good ferroelectric properties with a remanent polarization of 2P(r) = 59.6 mu C/cm(2) and fast switching behavior within about 125 ns. Piezoelectric force microscopy (PFM) study revealed that the BFO thin films have much smaller mosaic ferroelectric domain patterns than epitaxial BFO thin films on Nb:SrTiO3 substrates. Presumably these small domain widths which originated from smaller domain energy give rise to the faster electrical switching behavior in comparison with the epitaxial BFO thin films on Nb:SrTiO3 substrates. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：584 / 587
页数：4
相关论文
共 50 条
  • [1] Multiferroic properties and ferroelectric domain structures of Yb-doped BiFeO3 thin films on glass substrates
    Ahn, Yoonho
    Son, Jong Yeog
    [J]. PHYSICA B-CONDENSED MATTER, 2019, 558 : 24 - 27
  • [2] Ferroelectric domain structures of epitaxial (001) BiFeO3 thin films
    Chen, Y. B.
    Katz, M. B.
    Pan, X. Q.
    Das, R. R.
    Kim, D. M.
    Baek, S. H.
    Eom, C. B.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (07)
  • [3] Resistance switching in polycrystalline BiFeO3 thin films
    Yin, Kuibo
    Li, Mi
    Liu, Yiwei
    He, Congli
    Zhuge, Fei
    Chen, Bin
    Lu, Wei
    Pan, Xiaoqing
    Li, Run-Wei
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (04)
  • [4] Ferroelectric domain scaling and switching in ultrathin BiFeO3 films deposited on vicinal substrates
    Shelke, Vilas
    Mazumdar, Dipanjan
    Jesse, Stephen
    Kalinin, Sergei
    Baddorf, Arthur
    Gupta, Arunava
    [J]. NEW JOURNAL OF PHYSICS, 2012, 14
  • [5] Computer simulation of ferroelectric domain structures in epitaxial BiFeO3 thin films
    Zhang, J. X.
    Li, Y. L.
    Choudhury, S.
    Chen, L. Q.
    Chu, Y. H.
    Zavaliche, F.
    Cruz, M. P.
    Ramesh, R.
    Jia, Q. X.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
  • [6] Ferroelectric domain structures and thickness scaling of epitaxial BiFeO3 thin films
    Ahn, Yoonho
    Seo, Jeongdae
    Son, Jong Yeog
    Jang, Joonkyung
    [J]. MATERIALS LETTERS, 2015, 154 : 25 - 28
  • [7] Ferroelectric domain structure and polarization switching speed of highly (111)-oriented polycrystalline YMnO3 thin films on glass substrates
    Shin, Hyun Wook
    Son, Jong Yeog
    [J]. THIN SOLID FILMS, 2017, 636 : 247 - 250
  • [8] Local ferroelectric polarization switching properties of BiFeO3 nanodots and thin films depending on the ferroelectric polarization nanobit diameter
    Ahn, Yoonho
    Shin, Hyun Wook
    Son, Jong Yeog
    [J]. THIN SOLID FILMS, 2018, 649 : 142 - 146
  • [9] Defect-mediated ferroelectric domain depinning of polycrystalline BiFeO3 multiferroic thin films
    Bretos, I.
    Jimenez, R.
    Gutierrez-Lazaro, C.
    Montero, I.
    Calzada, M. L.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [10] Switchable ferroelectric diode and photovoltaic effects in polycrystalline BiFeO3 thin films grown on transparent substrates
    Zhou, Yong
    Wang, Can
    Tian, Shilu
    Yao, Xiaokang
    Ge, Chen
    Guo, Er-Jia
    He, Meng
    Yang, Guozhen
    Jin, Kuijuan
    [J]. THIN SOLID FILMS, 2020, 698
12345