Quantum effects along the channel of ultra-scaled Si-based MOSFETs?

被引：3

作者：

Chen, WQ ^{[1
]}

Ouyang, QQ ^{[1
]}

Banerjee, SK ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Austin, TX 78758 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum transport simulations along the channels of ultra-scaled Si and SiGe heterostructure MOSFETs suggest that semiclassical models may remain reliable within the channel down to roughly 10 nm and perhaps beyond. However, quantum mechanical effects on injection into the channel in SiGe devices may be important even in relatively long channel devices.

引用

页码：291 / 294

页数：4

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