Synthesis of Lithography Free Micro-Nano Electron Field Emitters Using Pulsed KrF Laser Assisted Metal Induced Crystallization of Thin Silicon Films

被引：0

作者：

Shamim, Mohammed Zubair Mohammed ^{[1
]}

Persheyev, Saydulla ^{[2
]}

Zaidi, Monji ^{[1
]}

Usman, Mohammed ^{[1
]}

Shiblee, Mohammad ^{[3
]}

Ali, Syed Jaffar ^{[3
]}

Rahman, Mohammad Rizwanur ^{[4
]}

机构：

[1] King Khalid Univ, Coll Engn, Dept Elect Engn, Abha, Saudi Arabia

[2] Univ St Andrews, Sch Phys & Astron, Organ Semicond Ctr, St Andrews, Fife, Scotland

[3] King Khalid Univ, Dept Comp Engn, Abha, Saudi Arabia

[4] Natl Inst Technol Karnataka, Dept Met & Mat Engn, Surathkal, India

来源：

INTEGRATED FERROELECTRICS | 2020年 / 204卷 / 01期

关键词：

Hydrogenated amorphous silicon; excimer laser crystallization; metal induced crystallization; micro-nano emitters; electron field emission; AMORPHOUS-SILICON; EMISSION; EXCIMER; POLYSILICON; MEMORY; TRANSISTORS; TRANSPORT; CARBON; HWCVD;

D O I：

10.1080/10584587.2019.1674971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated amorphous thin silicon films (a-Si:H) deposited on metal coated glass substrates were investigated to analyze the effect of a novel processing technique called Laser Assisted Metal Induced Crystallization (LAMIC) on their electron field emission (FE) properties. Post-surface characterization of the processed films showed increased surface roughness and the presence of uniformly spaced "island-like" micro-nano structures on the surface of metal coated backplane samples. Best FE results were obtained from samples sputtered with a thin layer of Aluminum (Al) on top and cross laser annealed at 190 mJ/cm(2) (y-axis) and 100 mJ/cm(2) (x-axis). FE measurements indicate a low turn-on electric field of less than 16 V/mu m with emission currents in the order of 10(-6) A. FE results were found to be particularly dependent on the laser fluence and the surface morphology exhibited very high discharge resistance. Oxidation of the films was observed to deteriorate their FE characteristics, thereby increasing the emission threshold to 36 V/mm. Diode configured field emission display prototypes are fabricated to exemplify their potential as cold cathode emitters.

引用

页码：121 / 132

页数：12

共 6 条

[1] Nano electron field emitters synthesized using excimer laser assisted metal induced crystallization of thin silicon films
Shamim, M. Z.
Usman, M.
Zaidi, Moonji
Persheyev, S.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2020, 22 (3-4): : 143 - 148
[2] Micro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiation
Shamim, Mohammed Zubair Mohammed
Persheyev, Saydulla
Zaidi, Monji
Usman, Mohammed
Shiblee, Mohammad
Ali, Syed Jaffar
Rahman, Mohammad Rizwanur
INTEGRATED FERROELECTRICS, 2020, 204 (01) : 47 - 57
[3] Fabrication of poly-silicon thin films on glass and flexible substrates using laser initiated metal induced crystallization of amorphous silicon
Abu-Safe, Husam H.
Naseem, Hameed A.
Brown, William D.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006, 2007, 910 : 553 - 558
[4] Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique
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Haji, Saber
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AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006, 2007, 910 : 441 - 446
[5] Pulsed Laser Assisted Micro-Scribing of Metal Thin Films in Air and Underwater using UV, Visible and Near-IR Wavelengths
Nammi, Srinagalakshmi
Vasa, Nilesh J.
Balaganesan, G.
Mathur, Anil C.
44TH NORTH AMERICAN MANUFACTURING RESEARCH CONFERENCE, NAMRC 44, 2016, 5 : 684 - 695
[6] Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target
Sun, J
Wu, AM
Xu, N
Ying, ZF
Shen, XK
Dong, ZB
Wu, JD
Shi, LQ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (06): : 1633 - 1637

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