Characterization of chemical solution deposition-derived lead hafnate titanate thin films

被引：11
|
作者：
Schorn, PJ [1 ]
Schneller, T [1 ]
Böttger, U [1 ]
Waser, R [1 ]
机构：
[1] Univ Aachen, Inst Mat Elect Engn & Informat Technol 2, IWE 2, D-52074 Aachen, Germany
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2005年 / 88卷 / 05期
关键词：
D O I：
10.1111/j.1551-2916.2004.00177.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, lead hafnate titanate (PHT) was derived by chemical solution deposition (CSD) and characterized as A thin film material. The thin films were tested for the usage as a ferroelectric thin film in view of Ferroelectric Random Access Memory (FRAM) devices and compared with an equivalent lead zirconate titanate (PZT) thin film, which was prepared under the same conditions. After determining the thickness and the morphology of the PHT films, electronic measurements were performed to investigate this material as a promising candidate in view of FRAM applications due to failure mechanisms like fatigue and imprint.
引用
收藏
页码：1312 / 1314
页数：3
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