A Simplified IGBT Behavioral Model with a Tail Current Module for Switching Losses Estimation

被引：0

作者：

Li, Gengyao ^{[1
]}

Wen, Hao ^{[1
]}

Yao, Chengcheng ^{[1
]}

Wang, Jin ^{[1
]}

Lu, Xi ^{[2
]}

Xu, Zhuxian ^{[2
]}

Zou, Ke ^{[2
]}

Kikuchi, Jun ^{[2
]}

Chen, Chingchi ^{[2
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ford Motor Co, Res & Innovat Ctr, Dearborn, MI 48121 USA

来源：

2017 IEEE 18TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) | 2017年

关键词：

IBGT behavioral model; Switching loss; Tail current;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Behavioral models of semiconductor devices have been widely implemented in simulation tools because they have simple structures and easy parameter extraction procedures. However, the IGBT behavioral model is more complicated than that of the MOSFET because the BJT structure exhibits charge storage phenomenon, such as the tail current. In this paper, a simple IGBT behavioral model with easy parameter extraction procedure and wide temperature range is proposed to estimate hard switching loss at different operation conditions. A tail current module is implemented so that the estimation of turn-off loss becomes more accurate. The switching performance of the proposed model is validated at different voltages, currents, gate resistance and temperatures.

引用

页数：6

共 38 条

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