Pulsed laser deposition of YBCO with yttrium oxide buffer layers

被引:0
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作者
Nekkanti, RM [1 ]
Barnes, PN [1 ]
Brunke, LB [1 ]
Haugan, TJ [1 ]
Yust, NA [1 ]
Maartense, I [1 ]
Murphy, JP [1 ]
Sathiraju, S [1 ]
Evans, JM [1 ]
Tolliver, JC [1 ]
Marken, KR [1 ]
机构
[1] USAF, AFRL PRPG, Wright Patterson AFB, OH 45433 USA
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中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Textured metallic substrate based HTS coated conductors with the YBCO/CeO2/YSZ/CeO2/Ni architecture have already been shown to exhibit high current densities. The CeO2 seed layer can effectively minimize the formation of NiO during the initial deposition on Ni and the CeO2 cap layer provides good lattice matching to the subsequent YBCO layer. However, there are reports of cracks developing in the CeO2 seed layer after a thicker growth due to a lattice mismatch with Ni, which can lead to poor performance of the YBCO conductor. The present work explores an alternate approach by using yttrium oxide not only as the seed layer but also as the cap layer in place of CeO2. In the literature, yttriurn oxide films grown on nickel by electron beam evaporation processes were found to be dense and crack-free with good epitaxy. This is likely the first report of using Y2O3 as a seed as well as a cap layer within the YBCO coated conductor architecture on specimens being fabricated in a single chamber. Pulsed laser deposition was used to perform deposition of all layers. Preliminary experiments resulted in specimens with current densities of more than 1 MA/cm(2) at 77K in self field. Characterization of samples was accomplished using x-ray diffraction, both resistive and ac susceptibility derived T-c, and J(c) transport measurements.
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页码:63 / 72
页数:10
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