Electronic transport through single-wall nicked carbon nanotubes

被引：8
|
作者：
Ren, W
Wang, J
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei, Anhui, Peoples R China
来源：
PHYSICAL REVIEW B | 2004年 / 69卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.69.033306
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the electronic transport properties of single wall nicked carbon nanotube (SWNT) using a tight-binding model. In particular, the conductance, emittance, and local density of states of the nicked SWNT are calculated. The resonance structures at all energy levels depend, as expected, on the specific configuration of the system. Two transmissive eigenchannels through the system are separated and examined in detail. Several nicking strengths are considered and quantum dot behavior has been found only for heavily nicked carbon nanotubes. Furthermore, the interesting properties of the emittance of the nicked SWNT is discussed.
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页数：4
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