First-principles determination of band-to-band electronic transition energies in cubic and hexagonal AlGaInN alloys

被引：4

作者：

Freitas, F. L. ^{[1
]}

Marques, M. ^{[1
]}

Teles, L. K. ^{[1
]}

机构：

[1] Inst Tecnol Aeronaut, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, SP, Brazil

来源：

AIP ADVANCES | 2016年 / 6卷 / 08期

基金：

巴西圣保罗研究基金会;

关键词：

MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; WAVE BASIS-SET; QUATERNARY ALGAINN; INGAN SINGLE; ALINGAN; GROWTH; LUMINESCENCE; SEMICONDUCTORS; LOCALIZATION;

D O I：

10.1063/1.4961118

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal AlxGayIn1-x-yN semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations. (C) 2016 Author(s).

引用

页数：6

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