Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices

被引:0
|
作者
Aldrigo, Martino [1 ]
Dragoman, Mircea [1 ]
Masotti, Diego [2 ]
机构
[1] IMT Bucharest, Voluntari 077190, Ilfov, Romania
[2] Univ Bologna, DEI, I-40136 Bologna, Italy
关键词
Microstrip antennas; tunable filters; molybdenum compounds; carbon nanotubes; ANTENNAS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we show the electromagnetic design of a small patch antenna based on a molybdenum disulphide (MoS2) monolayer, with an area of only 22mm(2), that exhibits high radiation efficiency and large tunability in microwaves at 10GHz thanks to a metal-insulator transition (MIT) induced by electrostatic gating. Furthermore, the MIT in MoS2 is used to reconfigure a tunable carbon nanotube-based filter, conferring it different functionalities: low-pass, high-pass and band-pass around 2GHz, while its carbon nanotube varactors allow tuning the cutoff frequency or central frequency.
引用
收藏
页码:101 / 104
页数:4
相关论文
共 50 条
  • [1] Mobility engineering and a metal-insulator transition in monolayer MoS2
    Radisavljevic, Branimir
    Kis, Andras
    [J]. NATURE MATERIALS, 2013, 12 (09) : 815 - 820
  • [2] Metal-insulator crossover in monolayer MoS2
    Castillo, I
    Sohier, T.
    Paillet, M.
    Cakiroglu, D.
    Consejo, C.
    Wen, C.
    Klein, F. Wasem
    Zhao, M-Q
    Ouerghi, A.
    Contreras, S.
    Johnson, A. T. Charlie
    Verstraete, M. J.
    Jouault, B.
    Nanot, S.
    [J]. NANOTECHNOLOGY, 2023, 34 (33)
  • [3] Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition
    Lee, Jin Hee
    Gul, Hamza Zad
    Kim, Hyun
    Moon, Byoung Hee
    Adhikari, Subash
    Kim, Jung Ho
    Choi, Homin
    Lee, Young Hee
    Lim, Seong Chu
    [J]. NANO LETTERS, 2017, 17 (02) : 673 - 678
  • [4] Metal-insulator transition in monolayer MoS2 via contactless chemical doping
    van Efferen, Camiel
    Murray, Clifford
    Fischer, Jeison
    Busse, Carsten
    Komsa, Hannu-Pekka
    Michely, Thomas
    Jolie, Wouter
    [J]. 2D MATERIALS, 2022, 9 (02):
  • [5] Mobility engineering and a metal-insulator transition in monolayer MoS 2
    Radisavljevic B.
    Kis A.
    [J]. Nature Materials, 2013, 12 (9) : 815 - 820
  • [6] Anomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS2 at Low Voltage Regime
    Moon, Byoung Hee
    Bae, Jung Jun
    Han, Gang Hee
    Kim, Hyun
    Choi, Homin
    Lee, Young Hee
    [J]. ACS NANO, 2019, 13 (06) : 6631 - 6637
  • [7] Metal-insulator crossover in multilayered MoS2
    Park, Min Ji
    Yi, Sum-Gyun
    Kim, Joo Hyung
    Yoo, Kyung-Hwa
    [J]. NANOSCALE, 2015, 7 (37) : 15127 - 15133
  • [8] Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition
    Heo, Jinseong
    Jeong, Heejeong
    Cho, Yeonchoo
    Lee, Jaeho
    Lee, Kiyoung
    Nam, Seunggeol
    Lee, Eun-Kyu
    Lee, Sangyeob
    Lee, Hyangsook
    Hwang, Sungwoo
    Park, Seongjun
    [J]. NANO LETTERS, 2016, 16 (11) : 6746 - 6754
  • [9] Evidence of Native Cs Impurities and Metal-Insulator Transition in MoS2 Natural Crystals
    Molle, Alessandro
    Fabbri, Filippo
    Campi, Davide
    Lamperti, Alessio
    Rotunno, Enzo
    Cinquanta, Eugenio
    Lazzarini, Laura
    Kaplan, Daniel
    Swaminathan, Venkataraman
    Bernasconi, Marco
    Longo, Massimo
    Salviati, Giancarlo
    [J]. ADVANCED ELECTRONIC MATERIALS, 2016, 2 (06):
  • [10] ENCAPSULATION OF POLYMERS INTO MOS2 AND METAL TO INSULATOR TRANSITION IN METASTABLE MOS2
    BISSESSUR, R
    KANATZIDIS, MG
    SCHINDLER, JL
    KANNEWURF, CR
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 206 : 173 - INOR