Mid-infrared semiconductor lasers

被引：0

作者：

Simecek, T ^{[1
]}

Hulicius, E ^{[1
]}

Oswald, J ^{[1
]}

Pangrác, J ^{[1
]}

Capek, P ^{[1
]}

Heime, K ^{[1
]}

Behres, A ^{[1
]}

Joullie, A ^{[1
]}

Christol, P ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic

来源：

ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ASDAM.2000.889460

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

For mid-infrared semiconductor lasers the most important goal is to overcome the nonradiative recombination? processes and to improve the important laser parameters, including temperature dependence of the threshold current, maximum attainable optical power, spectral purity, and lifetime expectancy. Recently several new physical concepts have been adopted, bringing a couple of major improvements with the final solution being still ahead of us.

引用

页码：105 / 108

页数：4

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