Loss Analysis of GaN-Based Dual Active Bridge Converter for Power Electronic Transformer

被引：0

作者：

Liu, Yusong ^{[1
]}

Zhu, Xiyuan ^{[1
]}

Mao, Zhongya ^{[1
]}

Kang, Jinsong ^{[2
]}

Shen, Jie ^{[3
]}

机构：

[1] Tongji Univ, Coll Elect & Informat Engn, Shanghai, Peoples R China

[2] Tongji Univ, Inst Rail Transit, Shanghai, Peoples R China

[3] Shanghai Lingang Power Elect Res Inst, Shanghai, Peoples R China

来源：

2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA) | 2020年

关键词：

dual active bridge; phase shift control; Gallium Nitride; loss calculation; efficiency analysis;

D O I：

10.1109/IPEMC-ECCEAsia48364.2020.9367856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of GaN power device in dual active bridge (DAB) converter could improve the power density and efficiency of system with a higher operating frequency, which is of great significance to power electronic transformer. This paper analyzes the loss characteristics of GaN based dual active bridge (DAB) converter. Due to the special switching and conduction characteristic of GaN device, this paper analyzes the conduction loss, switching loss and magnetic element loss of DAB converter respectively under single-phase-control, and the influence of soft switching and dead zone effect are considered. The key factors of the system efficiency such as phase shift angle, turn radio and dead zone time are optimized. An experimental prototype is developed to verify the proposed the optimizing method.

引用

页码：2390 / 2395

页数：6

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