Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments

被引：14

作者：

Wong, Matthew S. ^{[1
]}

Back, Joonho ^{[2
]}

Hwang, David ^{[1
]}

Lee, Changmin ^{[1
]}

Wang, Jianfeng ^{[1
]}

Gandrothula, Srinivas ^{[1
]}

Margalith, Tal ^{[1
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 08期

关键词：

microLED; III-nitride; tunnel junction; GaN; InGaN; LED; InGaN devices; GAN; DAMAGE; PERFORMANCE;

D O I：

10.35848/1882-0786/ac1230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High wall-plug efficiency (WPE) micro-light-emitting diodes with metalorganic chemical vapor deposition-grown tunnel junction (TJ) contacts are demonstrated. By employing chemical treatments before sidewall activation, the 20 x 20 mu m(2) TJ devices resulted in a voltage penalty of 0.2 V at 20 A cm(-2), compared to devices with indium-tin oxide (ITO) contacts. Moreover, the enhancement in light output power was more than 40% higher than ITO devices. Hence, the TJ devices yielded the peak external quantum efficiency (EQE) and WPE of 56% and 55%, respectively, indicating the improvements of 64% and 77% in peak EQE and WPE compared to ITO devices.

引用

页数：5

共 20 条

[1] Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges
Wong, Matthew S.
Raj, Aditya
Chang, Hsun-Ming
Rienzi, Vincent
Wu, Feng
Ewing, Jacob J.
Trageser, Emily S.
Gee, Stephen
Palmquist, Nathan C.
Chan, Philip
Kang, Ji Hun
Speck, James S.
Mishra, Umesh K.
Nakamura, Shuji
DenBaars, Steven P.
AIP ADVANCES, 2023, 13 (01)
[2] Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition
Hwang, David
Mughal, Asad J.
Wong, Matthew S.
Alhassan, Abdullah I.
Nakamura, Shuji
DenBaars, Steven P.
APPLIED PHYSICS EXPRESS, 2018, 11 (01)
[3] Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition
Wong, Matthew S.
Palmquist, Nathan C.
Jiang, Jiaxiang
Chan, Philip
Lee, Changmin
Li, Panpan
Kang, Ji Hun
Baek, Yong Hyun
Kim, Chae Hon
Cohen, Daniel A.
Margalith, Tal
Speck, James S.
Nakamura, Shuji
DenBaars, Steven P.
APPLIED PHYSICS LETTERS, 2021, 119 (20)
[4] High external quantum efficiency III-nitride micro-light-emitting diodes
Wong, Matthew S.
Nakamura, Shuji
DenBaars, Steven P.
MICRO LEDS, 2021, 106 : 95 - 121
[5] Hybrid tunnel junction contacts to III-nitride light-emitting diodes
Young, Erin C.
Yonkee, Benjamin P.
Wu, Feng
Oh, Sang Ho
DenBaars, Steven P.
Nakamura, Shuji
Speck, James S.
APPLIED PHYSICS EXPRESS, 2016, 9 (02)
[6] Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition (vol 119, 202102, 2021)
Wong, Matthew S.
Palmquist, Nathan C.
Jiang, Jiaxiang
Chan, Philip
Lee, Changmin
Li, Panpan
Kang, Ji Hun
Baek, Yong Hyun
Kim, Chae Hon
Cohen, Daniel A.
Margalith, Tal
Speck, James S.
Nakamura, Shuji
DenBaars, Steven P.
APPLIED PHYSICS LETTERS, 2021, 119 (23)
[7] High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition
Wong, Matthew S.
Hwang, David
Alhassan, Abdullah I.
Lee, Changmin
Ley, Ryan
Nakamura, Shuji
Denbaars, Steven P.
OPTICS EXPRESS, 2018, 26 (16): : 21324 - 21331
[8] Review-Progress in High Performance III-Nitride Micro-Light-Emitting Diodes
Wong, Matthew S.
Nakamura, Shuji
DenBaars, Steven P.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 9 (01)
[9] Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package
Wong, Matthew S.
Oh, Sang Ho
Back, Joonho
Lee, Changmin
Speck, James S.
Nakamura, Shuji
DenBaars, Steven P.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (02)
[10] A violet III-nitride vertical-cavity surface-emitting laser with a MOCVD-grown tunnel junction contact
Lee, SeungGeun
Forman, Charles A.
Lee, Changmin
Kearns, Jared
Leonard, John T.
Cohen, Daniel A.
Speck, James S.
Nakamura, Shuji
DenBaars, Steven P.
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2018,

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