Fabrication of complex nanostructures of Poly(vinylidenefluoride-trifluoroethylene) by dual step hot-embossing

被引:3
|
作者
Wen, Juan-juan [1 ]
Shen, Zhen-kui [1 ]
Qiu, Zhi-jun [1 ]
Jiang, An-quan [1 ]
Liu, Ran [1 ]
Chen, Yifang [2 ]
机构
[1] Fudan Univ, State Key Lab ASIC & Syst, Dept Microelect, Shanghai 200433, Peoples R China
[2] Rutherford Appleton Lab, Micro & Nanotechnol Ctr, Didcot OX11 0QX, Oxon, England
来源
关键词
atomic force microscopy; embossing; ferroelectric materials; nanofabrication; nanolithography; nanostructured materials; polymer films; scanning electron microscopy; thin films; FILM; PB(ZR-0.3; TI-0.7)O-3;
D O I
10.1116/1.3662087
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, complex 3D ferroelectric nanostructures have been successfully fabricated on Poly(vinylidenefluoride-trifluoroethylene), P(VDF-TrFE), thin films using a special hot-embossing process with two sequential shots on the same site with a grating template and a rounded square array template at the same hot-embossing temperature. The nanostructures have been characterized with scanning electron microscopy, atomic force microscopy and piezoresponse force microscopy, respectively. It is shown that sequential hot-embossing offers an effective way to create complex structures for functional ferroelectric materials by conducting secondary or tertiary imprinting toward various applications, including mass production of ferroelectric devices such as nonvolatile memories, photonics, bionic structure and surface wetting. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3662087]
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Imprint in Poly(vinylidenefluoride-trifluoroethylene)
    Peter, Christian
    Kliem, Herbert
    2016 IEEE INTERNATIONAL CONFERENCE ON DIELECTRICS (ICD), VOLS 1-2, 2016, : 701 - 704
  • [2] Ferroelectricity and molecular dynamics of poly(vinylidenefluoride-trifluoroethylene) nanoparticles
    Martinez-Tong, D. E.
    Soccio, M.
    Sanz, A.
    Garcia, C.
    Ezquerra, T. A.
    Nogales, A.
    POLYMER, 2015, 56 : 428 - 434
  • [3] Electromechanical properties of electrostrictive poly(vinylidenefluoride-trifluoroethylene) copolymer
    Zhao, XZ
    Bharti, V
    Zhang, QM
    Romotowski, T
    Tito, F
    Ting, R
    APPLIED PHYSICS LETTERS, 1998, 73 (14) : 2054 - 2056
  • [4] The ferroelectric and dielectric properties of poly (vinylidenefluoride-trifluoroethylene) copolymer/Ag composite films
    Ruan Ya-Fei
    Jiang Lin
    Wang Jian-Lu
    Sun Jing-Lan
    Liu Ai-Yun
    Meng Xiang-Jian
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2013, 32 (01) : 18 - 22
  • [5] Remanent Alignment of a Nematic Liquid Crystal Dispersed in Electrically Poled Poly(Vinylidenefluoride-Trifluoroethylene)
    Hollaender, L.
    Wirges, W.
    Gerhard, R.
    2011 14TH INTERNATIONAL SYMPOSIUM ON ELECTRETS (ISE), 2011, : 205 - 206
  • [6] Orientation control of poly(vinylidenefluoride-trifluoroethylene) crystals and molecules using atomic force microscopy
    Kimura, K
    Kobayashi, K
    Yamada, H
    Horiuchi, T
    Ishida, K
    Matsushige, K
    APPLIED PHYSICS LETTERS, 2003, 82 (23) : 4050 - 4052
  • [7] Study on orientation mechanisms of poly(vinylidenefluoride-trifluoroethylene) molecules aligned by atomic force microscopy
    Kimura, Kuniko
    Kobayashi, Kei
    Yamada, Hirofumi
    Horiuchi, Toshihisa
    Ishida, Kenji
    Matsushige, Kazumi
    APPLIED SURFACE SCIENCE, 2006, 252 (15) : 5489 - 5494
  • [8] Surface induced organisation of Poly[Vinylidenefluoride-Trifluoroethylene] on nanostructured Polytetrafluoroethylene: The ferroelectric phase transition
    Fischer, C
    Kruger, JK
    Heydt, B
    Servet, B
    Galtier, P
    FERROELECTRICS, 1998, 208 (1-4) : 347 - 361
  • [9] FERROELECTRIC PROPERTIES OF POLY (VINYLIDENEFLUORIDE-TRIFLUOROETHYLENE) CO-POLYMER THIN-FILMS
    KIMURA, K
    OHIGASHI, H
    APPLIED PHYSICS LETTERS, 1983, 43 (09) : 834 - 836
  • [10] Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs
    Fujisaki, Yoshihisa
    FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2016, 131 : 157 - 183