Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-Heating

被引：16

作者：

Radhakrishna, Ujwal ^{[1
]}

DasGupta, Amitava ^{[1
]}

DasGupta, Nandita ^{[1
]}

Chakravorty, Anjan ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 11期

关键词：

Compact model; impact ionization (II); lateral double-diffused metal-oxide-semiconductor (LDMOS); self-heating (SH); snapback (SB); silicon-on-insulator (SOI) technology;

D O I：

10.1109/TED.2011.2165724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics-based compact model for silicon-oninsulator lateral double-diffused metal-oxide-semiconductor transistors including impact ionization, subsequent snapback (SB), and self-heating (SH) is presented. It is observed that the SB effect is caused by the turn-on of the associated parasitic bipolar transistor. The model includes the effect of device SH using resistive thermal networks for each region. Comparisons of modeling results with device simulation data show that, over a wide range of bias voltages, the model exhibits excellent accuracy without any convergence problem.

引用

页码：4035 / 4041

页数：7

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