Sensor properties of Pt doped SnO2 thin films for detecting CO

被引：46
|
作者：
Tadeev, AV [1 ]
Delabouglise, G [1 ]
Labeau, M [1 ]
机构：
[1] Inst Natl Polytech Grenoble, Mat & Genie Phys Lab, UMR 5628, F-38402 St Martin Dheres, France
来源：
THIN SOLID FILMS | 1999年 / 337卷 / 1-2期
关键词：
sensor properties; Pt-doped SnO2; carbon monoxide;
D O I：
10.1016/S0040-6090(98)01392-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycristalline Pt-doped SnO2 thin films have been integrated to silicon substrate by ultrasonic spray deposition. This deposition technique differs from the usual SnO2 deposition methods by using a liquid source. It allows one to obtain a very fine and homogeneous dispersion of Pt aggregates which act as a catalyst for the low temperature CO detection (25-100 degrees C) by conductance change. The influence of synthesis temperature (460-560 degrees C), concentration of Pt additive (0.1-5 at.%) on gas sensitivity has been studied. The realisation of gas sensor includes a gas sensitive highly porous layer (SnO2/Pt, thickness: similar to 1 mu m). The results of electrical measurements under 300 ppm of CO for thin films in a dynamic and quasistatic regime are discussed. The narrow peak of gas sensitivity in the range of low temperatures (25-100 degrees C) is obtained for about 2 at.% Pt in the SnO2 film. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：163 / 165
页数：3
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