The nonlinear optical rectification of an ellipsoidal quantum dot with impurity in the presence of an electric field

被引：42

作者：

Chen, Tairong ^{[1
]}

Xie, Wenfang ^{[1
]}

Liang, Shijun ^{[1
]}

机构：

[1] Guangzhou Univ, Dept Phys, Coll Phys & Elect Engn, Guangzhou 510006, Guangdong, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2012年 / 44卷 / 04期

基金：

美国国家科学基金会;

关键词：

WELLS; ENERGY; STATES; WIRE;

D O I：

10.1016/j.physe.2011.11.027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have performed theoretical calculation of second-order nonlinear optical rectification (OR) coefficient in a typical GaAs/AlGaAs QD with ellipsoidal confinement potential in the presence of an impurity and an applied electric field. Using an appropriate coordinate transformation and the perturbation theory, we have investigated the OR coefficient as a function of incident photon energy. Calculation results show that the values of OR coefficient increase with an increase of applied electric field. However, the values decrease with increases in confinement strength and ellipticity constant. Additionally, the presence of a donor impurity shifts the OR coefficient peak positions to higher energies (blueshift), contrary to that of an acceptor impurity. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：786 / 790

页数：5

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