Columnar structure in porous silicon: influence of etching time on pore dynamics and ordering

被引:4
|
作者
Nikulin, A. Y. [1 ]
Pelliccia, D. [1 ]
Starkov, V. V. [2 ]
Sakata, O. [3 ]
机构
[1] Monash Univ, Sch Phys, Ctr Excellence Coherent X Ray Sci, Clayton, Vic 3800, Australia
[2] Russian Acad Sci, Inst Problems Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia
[3] JASRI SPring 8, Mikazuki, Hyogo 6795148, Japan
基金
澳大利亚研究理事会;
关键词
PHOTONIC CRYSTALS; PHASE-RETRIEVAL; RAY; DIFFRACTION;
D O I
10.1063/1.3561866
中图分类号
O59 [应用物理学];
学科分类号
摘要
Applications of porous silicon are ranging from drug delivery vehicles to micro fuel cells. The size of the pores and their distribution plays critical role in the final properties of the devices manufactured on their base. We performed nondestructive quantitative experimental studies of selected porous silicon samples with gradient porosity. We were able to determine the average size of the pores and its dynamics as a function of the etching time. We also were able to determine the statistical parameters of the pore formation. (C) 2011 American Institute of Physics. [doi:10.1063/1.3561866]
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Columnar structure in anodized porous silicon
    Aoyagi, H
    Motohashi, A
    Kinoshita, A
    Satoh, A
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1995, 78 (11): : 98 - 105
  • [2] Columnar structure in anodized porous silicon
    Aoyagi, Hidekazu
    Motohashi, Akira
    Kinoshita, Akira
    Satoh, Akinobu
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1995, 78 (11): : 98 - 105
  • [3] Effect of etching time on structure of p-type porous silicon
    Kopani, Martin
    Mikula, Milan
    Kosnac, Daniel
    Vojtek, Pavol
    Gregus, Jan
    Vavrinsky, Erik
    Jergel, Matej
    Pincik, Emil
    APPLIED SURFACE SCIENCE, 2018, 461 : 44 - 47
  • [4] Effect of Etching Time on Porous Silicon Processing
    Salman, Khaldun A.
    Omar, Khalid
    Hassan, Z.
    INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY - RESEARCH AND COMMERCIALIZATION 2011 (ICONT 2011), 2012, 1502 : 280 - 287
  • [5] DIFFERENT TYPES OF PORE STRUCTURE IN POROUS SILICON
    PARKHUTIK, VP
    ALBELLA, JM
    MARTINEZDUART, JM
    GOMEZRODRIGUEZ, JM
    BARO, AM
    SHERSHULSKY, VI
    APPLIED PHYSICS LETTERS, 1993, 62 (04) : 366 - 368
  • [6] Porous silicon: Influence of etching temperature on microstructure and luminescence
    Blackwood, DJ
    Zhang, Y
    SURFACE REVIEW AND LETTERS, 2001, 8 (05) : 429 - 433
  • [7] Ellipsometry studies on the effect of etching time in porous silicon
    Prabakaran, R
    Raghavan, G
    Sundari, ST
    Kesavamoorthy, R
    Xavier, FP
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 15 (04): : 243 - 251
  • [8] Pore structure of porous silicon formed on a lightly doped crystal silicon
    Ruike, M
    Houzouji, M
    Motohashi, A
    Murase, N
    Kinoshita, A
    Kaneko, K
    LANGMUIR, 1996, 12 (20) : 4828 - 4831
  • [9] Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon
    Kopani, Martin
    Mikula, Milan
    Kosnac, Daniel
    Kovac, Jaroslav
    Trnka, Michal
    Gregus, Jan
    Jerigova, Monika
    Jergel, Matej
    Vavrinsky, Erik
    Bacova, Silvia
    Zitto, Peter
    Polak, Stefan
    Pincik, Emil
    APPLIED SURFACE SCIENCE, 2020, 532 (532)
  • [10] Influence of different etching methods on the structural properties of porous silicon
    Zulkifli, Fatimah
    Radzali, Rosfariza
    Abd Rahim, Alhan Farhanah
    Mahmood, Ainorkhilah
    Mohd Razali, Nurul Syuhadah
    Abu Bakar, Aslina
    MICROELECTRONICS INTERNATIONAL, 2022, 39 (03) : 101 - 109