Accurate four-terminal RF MOSFET model accounting for the short-channel effect in the source-to-drain capacitance

被引：0

作者：

Je, M ^{[1
]}

Shin, H ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, RF Prod Team, Kyunggi, South Korea

来源：

2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2003年

关键词：

CMOS RF modeling; parameter extraction; three-port modeling; four-terminal modeling; non-quasi-static effect; substrate signal coupling; short-channel effect;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A four-terminal RF MOSFET model to accurately describe the three-port network characteristics is presented. It has been found that the short-channel effect in the source-to-drain capacitance plays a critical role in predicting behavior of the MOSFET in the common-gate/body configuration. Performance of the developed model was verified with the device simulation results.

引用

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页码：247 / 250

页数：4

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