On the role of hydrogen in organic magnetoresistance:: A study of C60 devices

被引：26
|
作者：
Nguyen, T. D. [1 ,2 ]
Sheng, Y. [1 ,2 ]
Wohlgenannt, M. [1 ,2 ]
Anthopoulos, T. D. [3 ]
机构：
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
[2] Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA
[3] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2BW, England
来源：
SYNTHETIC METALS | 2007年 / 157卷 / 22-23期
基金：
美国国家科学基金会;
关键词：
organic magnetoresistance; OMAR; hyperfine; carbon-60; PCBM; fullerene;
D O I：
10.1016/j.synthmet.2007.09.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The organic magnetoresistive (OMAR) effect has been observed in many different organic semiconductors, whereas a corresponding effect has not been reported for inorganic ones. What property makes organics behave so differently regarding magnetotransport? By studying C-60 devices using several different electrode materials we show that C-60, unlike many other organic semiconductors, does not exhibit any intrinsic OMAR effect. However, we find that as soon as the carriers in C-60 are brought in proximity with hydrogen-containing compounds; either in the form of a polymeric electrode, or side-chain substituents, a weak OMAR effect is observed. This shows that hydrogen is crucial for the observation of OMAR. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：930 / 934
页数：5
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