Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch

被引：58

作者：

Warren, Kevin M. ^{[1
]}

Sierawski, Brian D. ^{[1
]}

Reed, Robert A. ^{[2
]}

Weller, Robert A. ^{[2
]}

Carmichael, Carl ^{[3
]}

Lesea, Austin ^{[3
]}

Mendenhall, Marcus H. ^{[4
]}

Dodd, Paul E.

Schrimpf, Ron D. ^{[2
]}

Massengill, Lloyd W. ^{[2
]}

Hoang, Tan ^{[3
]}

Wan, Hsing ^{[3
]}

De Jong, J. L. ^{[3
]}

Padovani, Rick ^{[3
]}

Fabula, Joe J. ^{[3
]}

机构：

[1] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37203 USA

[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[3] Xilinx Inc, San Jose, CA 95124 USA

[4] Vanderbilt Univ, Free Elect Laser Facil, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

Gean4; MRED; rate prediction; SEU;

D O I：

10.1109/TNS.2007.907678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate.

引用

页码：2419 / 2425

页数：7

共 24 条

[1] Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry
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[2] VERIFICATION OF SINGLE EVENT UPSET RATE ESTIMATION METHODS WITH ON-ORBIT OBSERVATIONS
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[3] Monte-Carlo simulation of equivalence of single event upset induced by neutrons and protons
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[9] Predicting the Single-Event Error Rate of a Radiation Hardened by Design Microprocessor
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[10] Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions
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