Design, Analysis and Simulation of RF MEMS Capacitive Shunt Switch with Perforations for Ka-Band Applications

This paper presents the design and analysis of an RF MEMS Shunt switch with low pull-in voltage and good RF performance. The switch includes a vertically deforming beam which includes perforations and meanders. This switch is developed to run at a Radio Frequency (RF) of 35 GHz. The significant accomplishments in this work are the pull in voltage that is minimized to 3.72 V, and the return loss is listed below - 26.6 dB, the insertion loss is listed less than - 0.22 dB and isolation is - 36.4 dB. The up and down capacitance of the switch is 110 fF, 1.58 pF, and the obtained capacitance ratio is 113.5. The product utilized for the CPW line is Gold (Au). The dielectric product utilized in between the beam and the CPW transmission line is Silicon Nitride (Si3N4). We achieved electromechanical analysis through COMSOL software and RF analysis is done using HFSS software.