Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400 °C

Structural and electrical properties of SrRuO3 thin films grown at various temperatures (T-d) were investigated. The films grew epitaxially when T(d)greater than or equal to 350 degreesC. The dependences of crystallinity, conductivity, and carrier density on temperature were less pronounced when T-d was above 400 degreesC, whereas crystallinity and conductivity were markedly degraded with decreasing T-d when T(d)less than or equal to 400 degreesC. Owing to this unique dependence, SrRuO3 thin film deposited at T-d as low as 400 degreesC showed an acceptable quality for application to electronic devices. For the SrRuO3/SrTiO3/SrRuO3 trilayered capacitor structure, when the top SrRuO3 layer was grown at 400 degreesC, a symmetric permittivity-voltage curve was observed and the SrRuO3 permittivity value of 340 epsilon (0) was obtained. When the top SrRuO3 layer was grown at 600 degreesC, the permittivity value of SrTiO3 decreased and even a slight asymmetry of the permittivity-voltage curve could ever be observed. This indicates that the lower temperature deposition of SrRuO3 thin film causes less interface degradation. (C) 2001 American Institute of Physics.